These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.
100V,80A, RDS(ON) =9.2mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Networking
Load Switch
LED applications
Quick Charger
GDS
S
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous (TC=25℃) (Chip Limitation) Drain Current
– Continuous (TC=100℃) (Chip Limitati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDP0970 |
Potens semiconductor |
N-Channel MOSFETs | |
2 | PDP0974 |
Potens semiconductor |
N-Channel MOSFETs | |
3 | PDP0974A |
Potens semiconductor |
N-Channel MOSFETs | |
4 | PDP0978 |
Potens semiconductor |
N-Channel MOSFETs | |
5 | PDP0902 |
Potens semiconductor |
N-Channel MOSFETs | |
6 | PDP0903 |
Potens semiconductor |
P-Channel MOSFETs | |
7 | PDP0904 |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PDP0905 |
Potens semiconductor |
P-Channel MOSFETs | |
9 | PDP0959 |
Potens semiconductor |
P-Channel MOSFETs | |
10 | PDP0966 |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PDP0966A |
Potens semiconductor |
N-Channel MOSFETs | |
12 | PDP0980 |
Potens semiconductor |
N-Channel MOSFETs |