PDP0966 - Potens semiconductor

PDP0966 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

⚫ 100V,60A, RDS(ON) =18mΩ@VGS = 10V
⚫ Improved dv/dt capability
⚫ Fast switching
⚫ 100% EAS Guaranteed
⚫ Green Device Available Applications
⚫ Networking
⚫ Load Switch
⚫ LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed1 Single Pulse Avalanche Ene.