PD1503YVS - Niko-Sem

PD1503YVS Dual N-Channel MOSFET

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor PD1503YVS SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS Q2 Q1 30V 30V RDS(ON) 15.8mΩ 21mΩ ID 9A 8A 1 2 3 4 Q2 Q1 8 7 6 5 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Volt.

Features

d by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T A = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Q2 Q1 Q2 Q1 30 30 1 1 1.7 2 3 3 Oct-28-2009 1 Free Datasheet http://www.datasheet4u.com/ UNIT MIN TYP MAX V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A REV 0.9 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor PD1503YVS SOP-8 Halogen-Free & Lead-Free Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 35 30 14.2 10.5 25.6 15.8 25 .