PD1503YVS-A - UNIKC

PD1503YVS-A MOSFET

PD1503YVS-A Dual N- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 15.5mΩ @VGS = 10V 9A Q1 30V 18mΩ @VGS = 10V 8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanch.

Features

junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 62.5 °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA Q2 30 Q1 30 Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductan ce1 Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss VDS = VGS, ID = 250mA Q2 1 1.7 Q1 1 .