PCFFS2065AF - ON Semiconductor

PCFFS2065AF SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature dependent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inclu.

Features

• Max Junction Temperature 175°C
• Avalanche Rated 95 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits For Additional Product Information and Electrical Characteristics on Package Refer to FFSP2065A product datasheet. Die Information
• Wafer Diameter: 6 inch
• Die Size: 2,240 × 2,240 mm (include Scribe Lane)
• Metallization: ♦ Top: Ti/TiN/AICu 4 mm ♦ Back: Ti/NiV/Ag
• Die Thickness: Typ. 200 mm
• Bonding Pad Size: ♦ Anode: 1,8.