PCFFS10120AF - ON Semiconductor

PCFFS10120AF SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material − Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over−voltage condit.

Features

• Max Junction Temperature 175°C
• Avalanche Rated 105 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits Die Information
• Wafer Diameter: 6 inch
• Die Size: 2,280 × 2,280 mm (Include Scribe Lane)
• Metallization ♦ Top: Ti / TiN / AI 4 mm ♦ Back: Ti/ NiV / Ag
• Die Thickness: Typ. 200 mm
• Bonding Pad Size ♦ Anode: 1700 × 1700 mm
• Recommended Wire Bond (Note 1) ♦ Anode: 15 mil × 1 NOTE: 1. Based on TO−247 package of onsemi D.