PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat gene.
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = −.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS9110AS |
NXP |
1A PNP low VCEsat (BISS) transistor | |
2 | PBSS9110D |
NXP |
PNP transistor | |
3 | PBSS9110T |
NXP |
PNP low VCEsat (BISS) transistor | |
4 | PBSS9110X |
NXP |
PNP Transistor | |
5 | PBSS9110Y |
NXP |
PNP Transistor | |
6 | PBSS9410PA |
NXP |
2.7 A PNP low VCEsat (BISS) transistor | |
7 | PBSS2515E |
NXP |
0.5A NPN transistor | |
8 | PBSS2515F |
NXP |
low VCEsat NPN transistor | |
9 | PBSS2515M |
nexperia |
NPN transistor | |
10 | PBSS2515MB |
nexperia |
NPN transistor | |
11 | PBSS2515VPN |
NXP |
NPN/PNP Transistor | |
12 | PBSS2515VS |
NXP |
NPN Transistor |