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PBSS9110Z |
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| Part Number | PBSS9110Z |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z. 1.2 Features Low collector-e... |
| Features |
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
Table 1. VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = −... |
| Document |
 PBSS9110Z Data Sheet
PDF 231.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PBSS9110AS |
NXP |
1A PNP low VCEsat (BISS) transistor |
|
| 2 | PBSS9110D |
NXP |
PNP transistor |
|
| 3 | PBSS9110T |
NXP |
PNP low VCEsat (BISS) transistor |
|
| 4 | PBSS9110X |
NXP |
PNP Transistor |
|
| 5 | PBSS9110Y |
NXP |
PNP Transistor |
|