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NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T. MARKING TYPE NUMBER PBSS4350T MARKING CODE(1) ZC* Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-emitter voltage collector current (DC) repe.
• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5350T.
MARKING
TYPE NUMBER PBSS4350T
MARKING CODE(1) ZC
*
Note
1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = .
PBSS4350T - BLUE ROCKET ELECTRONICS
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features ，。 Low VCE(sat), high current. / .
PBSS4350T - Kexin
SMD Type NPN Transistors PBSS4350T (KBSS4350T) Transistors ■ Features ● High collector current capability ● High coll.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PBSS4350D |
NXP |
NPN transistor |
|
| 2 | PBSS4350S |
NXP |
50 V low VCEsat NPN transistor |
|
| 3 | PBSS4350SPN |
NXP |
2.7A NPN/PNP Low VCEsat (BISS) Transistor |
|
| 4 | PBSS4350SPN |
nexperia |
NPN/PNP transistor |
|
| 5 | PBSS4350SS |
NXP |
transistor |
|
| 6 | PBSS4350SS |
nexperia |
NPN/NPN transistor |
|
| 7 | PBSS4350X |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | PBSS4350X |
NXP |
transistor |
|
| 9 | PBSS4350Z |
nexperia |
50V low VCEsat NPN transistor |
|
| 10 | PBSS4350Z |
NXP |
NPN transistor |
|
| 11 | PBSS4320T |
NXP |
NPN transistor |
|
| 12 | PBSS4320T |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|