PBSS302NZ - NXP

PBSS302NZ 5.8A NPN transistor

NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • Smaller required P.

Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency due to less heat generation
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• AEC-Q101 qualified 3. Applications
• DC-to-DC conversion
• MOSFET gate driving
• Motor control
• Charging circuits
• Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat .