PBSS303ND - nexperia

PBSS303ND 3A NPN transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PD. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generat.

Features

I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I High-voltage DC-to-DC conversion I High-voltage MOSFET gate driving I High-voltage motor control I High-voltage power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter I Automotive applications 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data .