Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. • AEC-Q101 qualified 3. Applicatio.
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board requirements.
• AEC-Q101 qualified
3. Applications
• Power management:
• DC-DC converter
• Supply line switching
• Battery charger
• LCD backlighting.
• Peripheral driver:
• Driver in low supply voltage applications (e.g. lamps and LEDs).
• Inductive load drivers (e.g. relays, buzzers and motors).
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VCEO
collec.
PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS2540E |
NXP |
500 mA NPN low VCEsat (BISS) transistor | |
2 | PBSS2540F |
NXP |
40 V low V NPN transistor | |
3 | PBSS2540MB |
nexperia |
NPN transistor | |
4 | PBSS2515E |
NXP |
0.5A NPN transistor | |
5 | PBSS2515F |
NXP |
low VCEsat NPN transistor | |
6 | PBSS2515M |
nexperia |
NPN transistor | |
7 | PBSS2515MB |
nexperia |
NPN transistor | |
8 | PBSS2515VPN |
NXP |
NPN/PNP Transistor | |
9 | PBSS2515VS |
NXP |
NPN Transistor | |
10 | PBSS2515YPN |
NXP |
low VCE(sat) NPN/PNP transistor | |
11 | PBSS301ND |
NXP |
4A NPN transistor | |
12 | PBSS301NX |
nexperia |
5.3A NPN transistor |