NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-.
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base Min IC = 500 mA; IB = 50 mA [1] Symbol Parameter collector-emitter voltage collecto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS2540F |
NXP |
40 V low V NPN transistor | |
2 | PBSS2540M |
nexperia |
NPN transistor | |
3 | PBSS2540M |
NXP |
0.5 A NPN low VCEsat (BISS) transistor | |
4 | PBSS2540MB |
nexperia |
NPN transistor | |
5 | PBSS2515E |
NXP |
0.5A NPN transistor | |
6 | PBSS2515F |
NXP |
low VCEsat NPN transistor | |
7 | PBSS2515M |
nexperia |
NPN transistor | |
8 | PBSS2515MB |
nexperia |
NPN transistor | |
9 | PBSS2515VPN |
NXP |
NPN/PNP Transistor | |
10 | PBSS2515VS |
NXP |
NPN Transistor | |
11 | PBSS2515YPN |
NXP |
low VCE(sat) NPN/PNP transistor | |
12 | PBSS301ND |
NXP |
4A NPN transistor |