PBF493S - Motorola Inc

PBF493S High Voltage Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High Voltage Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF493 PBF493S MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissip.

Features

down Voltage (IC =
  –10 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE =
  –100 mAdc, IC = 0) Collector Cutoff Current (VCB =
  –200 Vdc, IE = 0) Emitter Cutoff Current (VEB =
  –3.0 Vdc) Collector Cutoff Current (VCE =
  –10 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO
  –300
  –300
  –5.0 — — — — — —
  –0.25
  –20
  –250 Vdc Vdc Vdc µAdc nAdc nAdc v 300 ms; Duty Cycle v 2.0%. Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 PBF493 PBF493S ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min M.