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PBF493S |
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| Part Number | PBF493S |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493/D High Voltage Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER PBF493 PBF493S MAXIMUM RATINGS Rating Collector – Emitter V... |
| Features |
down Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –10 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO –300 –300 –5.0 — — — — — — –0.25 –20 –250 Vdc Vdc Vdc µAdc nAdc nAdc v 300 ms; Duty Cycle v 2.0%. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 PBF493 PBF493S ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min M... |
| Document |
 PBF493S Data Sheet
PDF 123.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PBF493 |
Motorola Inc |
High Voltage Transistors |
|
| 2 | PBF493R |
Motorola |
HIGH VOLTAGE TRANSISTORS |
|
| 3 | PBF493RS |
Motorola Inc |
High Voltage Transistors |
|
| 4 | PBF-1201 |
DENSEI-LAMBDA |
Equipment Designed to Conform EMI Regulations Such As VCCI/CISPR/FCC/VDE/etc |
|
| 5 | PBF-1201-22 |
DENSEI-LAMBDA |
Equipment Designed to Conform EMI Regulations Such As VCCI/CISPR/FCC/VDE/etc |
|