These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge .
Type STB85NF55T4
STP85NF55
VDS 55 V
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
RDS(on) max. 8.0 mΩ
ID 80 A
G(1) S(3)
Applications
• Switching applications
AM01475v1_noZen
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate char.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P850-G120-WH |
Bourns |
Dual TBU High-Speed Protectors | |
2 | P850-G200-WH |
Bourns |
Dual TBU High-Speed Protectors | |
3 | P8503BMA |
UNIKC |
N-Channel MOSFET | |
4 | P8503BMG |
UNIKC |
N-Channel MOSFET | |
5 | P852B |
Samsung |
8-BIT CMOS MICROCONTROLLERS | |
6 | P85FG6EAL |
SHINDENGEN |
Power MOSFET | |
7 | P85GC28HP2F |
Shindengen |
Power MOSFET | |
8 | P8008BD |
UNIKC |
N-Channel MOSFET | |
9 | P8008BDA |
UNIKC |
N-Channel Transistor | |
10 | P8008BV |
UNIKC |
N-Channel MOSFET | |
11 | P8008BVA |
UNIKC |
N-Channel MOSFET | |
12 | P8008HV |
UNIKC |
N-Channel MOSFET |