Nch PowerMOSFET P85FG6EAL ■ OUTLINE Package:FG Unit:mm 60V85A 4.5V Feature SMD LowRON 4.5VGateDrive LowCapacitance ໊ུ߸ 5ZQF /P ᶆ 85FG6EAL 000 000 ϩοτཧ൪߸ʢྫʣ -PU $POUSPM /P ᶃᶄᶅ ᶃ( ᶄ% ᶅ4 ᶆ% Web。 。 Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe marking,refertothespecification"Marking,Terminal.
MIN TYP MAX Unit Drain-SourceBreakdownVoltage ZeroGateVoltageDrainCurrent Gate-SourceLeakageCurrent ForwardTransconductance V(BR)DSS ID=1mA,VGS=0V IDSS VDS=60V,VGS=0V IGSS VGS=±20V,VDS=0V gfs ID=42.5A,VDS=10V R StaticDrain-SourceOn-stateResistance (DS)ON ID=42.5A,VGS=10V ID=42.5A,VGS=4.5V GateThresholdVoltage VTH ID=1mA,VDS=10V Source-DrainDiodeForwardVoltage VSD IS=85A,VGS=0V ThermalResistance θjc Junctiontocase TotalGateCharge Qg GatetoSourceCharge Qgs VDD=48V,VGS=10V,ID=85A GatetoDrainCharge Qgd InputCapacitance Ciss ReverseTransferCapacitance Crss VDS=2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P850-G120-WH |
Bourns |
Dual TBU High-Speed Protectors | |
2 | P850-G200-WH |
Bourns |
Dual TBU High-Speed Protectors | |
3 | P8503BMA |
UNIKC |
N-Channel MOSFET | |
4 | P8503BMG |
UNIKC |
N-Channel MOSFET | |
5 | P852B |
Samsung |
8-BIT CMOS MICROCONTROLLERS | |
6 | P85GC28HP2F |
Shindengen |
Power MOSFET | |
7 | P85NF55 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | P8008BD |
UNIKC |
N-Channel MOSFET | |
9 | P8008BDA |
UNIKC |
N-Channel Transistor | |
10 | P8008BV |
UNIKC |
N-Channel MOSFET | |
11 | P8008BVA |
UNIKC |
N-Channel MOSFET | |
12 | P8008HV |
UNIKC |
N-Channel MOSFET |