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This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED.
Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 45 31 180 100 0.67 7 -65 to 175 175
(1) ISD ≤ 45 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
60 60 ± 20 25 17.5 180 35 0.23 2000
V V V A A A W W/ o C V V/ns
o o
C C
(
•) Pulse width limited by safe operating .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P45N02 |
Intersil Corporation |
45A / 20V / 0.022 Ohm / N-Channel Logic Level Power MOSFETs |
|
| 2 | P45N02LD |
Niko-Sem |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | P45N02LDG |
UNIKC |
N-Channel MOSFET |
|
| 4 | P45N02LDG |
Niko-Sem |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 5 | P45N02LI |
UNIKC |
MOSFET |
|
| 6 | P45N03LTFG |
UNIKC |
N-Channel MOSFET |
|
| 7 | P45N03LTG |
Niko |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 8 | P45N10 |
ST Microelectronics |
STP45N10 |
|
| 9 | P4500EA |
SOCAY |
Thyristor Surge Suppressors |
|
| 10 | P4500LA |
WPM |
Thyristors Solid Protection Device Bidirectional transient voltage suppressors |
|
| 11 | P4500LA |
SOCAY |
Thyristor Surge Suppressors |
|
| 12 | P4500LB |
WPM |
Thyristors Solid Protection Device Bidirectional transient voltage suppressors |
|