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P45N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 20mΩ @VGS = 10V 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C .
OL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 25 1.0 1.8 2.5 ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 125 °C 25 250 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 110 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 10A VGS = 10V, ID = 15A VDS = 5V, ID = 15A 29 41 14 20 19 DYNAMIC Input Capacitance Ciss 492 Output Capacitanc.
P45N02LDG - Niko-Sem
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LDG TO-252 (DPAK) Lead-Free D PRODUCT S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P45N02LD |
Niko-Sem |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | P45N02LI |
UNIKC |
MOSFET |
|
| 3 | P45N02 |
Intersil Corporation |
45A / 20V / 0.022 Ohm / N-Channel Logic Level Power MOSFETs |
|
| 4 | P45N03LTFG |
UNIKC |
N-Channel MOSFET |
|
| 5 | P45N03LTG |
Niko |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | P45N10 |
ST Microelectronics |
STP45N10 |
|
| 7 | P45NE06L |
ST Microelectronics |
STP45NE06L |
|
| 8 | P4500EA |
SOCAY |
Thyristor Surge Suppressors |
|
| 9 | P4500LA |
WPM |
Thyristors Solid Protection Device Bidirectional transient voltage suppressors |
|
| 10 | P4500LA |
SOCAY |
Thyristor Surge Suppressors |
|
| 11 | P4500LB |
WPM |
Thyristors Solid Protection Device Bidirectional transient voltage suppressors |
|
| 12 | P4500LB |
LAN |
Over-voltage Protection Thyristor |
|