PFC Device Corporation P20150E P20150D 20A 150V MOS Schottky Rectifier Major ratings and characteristics Characteristics IF(AV) Rectangular Waveform VRRM VF@ 10A , Tj=125 oC TJ Operating Junction Temperature Values 10 × 2 150 0.68 -65 to +175 Units A V V, typ. oC Features Low Forward Voltage Drop Reliable High Temperature Operation Softest, fast.
Low Forward Voltage Drop
Reliable High Temperature Operation
Softest, fast switching capability
175oC Operating Junction Temperature
Lead Free Finish, RoHS Compliant
Typical Applications
Device optimized for low forward voltage drop to maximize efficiency in Power Supply applications
P20150E 2
3 1 TO-251 (I-PAK)
P20150D 2
3 1 TO-252 (D-PAK)
Sep-2015
Version 4.0
1/6
www.pfc-device.com
Characteristics
P20150
1. Characteristics
Maximum Ratings Characteristics
( TA = 25℃ unless otherwise specified )
Parameter DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Rev.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P20150D |
PFC Device Corporation |
MOS Schottky Rectifier | |
2 | P2010A |
ON Semiconductor |
Low Frequency EMI Reduction IC | |
3 | P2010DN |
Fairchild Semiconductor |
FYP2010DN | |
4 | P201B |
Hamamatsu Corporation |
CdS photoconductive cell | |
5 | P201D |
Hamamatsu Corporation |
CdS photoconductive cell | |
6 | P201D-5R |
Hamamatsu Corporation |
CdS photoconductive cell | |
7 | P2000A |
Diotec |
Silicon Rectifier Diodes | |
8 | P2000A |
Semikron |
Standard silicon rectifier diodes | |
9 | P2000AA61L |
Littelfuse |
SIDACtor Device | |
10 | P2000ATL |
Diotec |
Standard Recovery Rectifier Diodes | |
11 | P2000B |
Diotec |
Silicon Rectifier Diodes | |
12 | P2000B |
Semikron |
Standard silicon rectifier diodes |