FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) .
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
1 2 3
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 20 150 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P2010A |
ON Semiconductor |
Low Frequency EMI Reduction IC | |
2 | P20150D |
PFC Device Corporation |
MOS Schottky Rectifier | |
3 | P20150E |
PFC Device Corporation |
MOS Schottky Rectifier | |
4 | P201B |
Hamamatsu Corporation |
CdS photoconductive cell | |
5 | P201D |
Hamamatsu Corporation |
CdS photoconductive cell | |
6 | P201D-5R |
Hamamatsu Corporation |
CdS photoconductive cell | |
7 | P2000A |
Diotec |
Silicon Rectifier Diodes | |
8 | P2000A |
Semikron |
Standard silicon rectifier diodes | |
9 | P2000AA61L |
Littelfuse |
SIDACtor Device | |
10 | P2000ATL |
Diotec |
Standard Recovery Rectifier Diodes | |
11 | P2000B |
Diotec |
Silicon Rectifier Diodes | |
12 | P2000B |
Semikron |
Standard silicon rectifier diodes |