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P1060ETF - UNIKC

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P1060ETF N-Channel MOSFET

P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.77Ω @VGS = 10V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,.

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°C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA 600 V 2 2.9 4 VDS = 0V, VGS = ±30V ±100 nA VDS = 600V, VGS = 0V , TC = 25 °C VDS =480V, VGS = 0V, TC = 100°C 1 mA 10 VGS = 10V, ID = 5A 0.57 0.77 Ω VDS =15V, ID = 5A 15 S DYNAMIC Input Capacitance Ciss 1552 Output Capacitance Coss VGS = 0V,.

The same part from a different manufacturer

Datasheet P1060ETF - NIKO-SEM P1060ETF

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