P1060ETF / P1060ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.77Ω @VGS = 10V 10A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,.
°C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA 600 V 2 2.9 4 VDS = 0V, VGS = ±30V ±100 nA VDS = 600V, VGS = 0V , TC = 25 °C VDS =480V, VGS = 0V, TC = 100°C 1 mA 10 VGS = 10V, ID = 5A 0.57 0.77 Ω VDS =15V, ID = 5A 15 S DYNAMIC Input Capacitance Ciss 1552 Output Capacitance Coss VGS = 0V,.
NIKO-SEM N-ChFainenldelEEffnehcatnTcreamnseinsttoMrodeHaPPlo11g00e66n00-FEErTTeFFe:S&T:OTLOe-2a-22d02-FF0rFeSe PRODUCT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P1060ETFS |
UNIKC |
N-Channel MOSFET | |
2 | P1060ETFS |
NIKO-SEM |
N-Channel MOSFET | |
3 | P1060AT |
UNIKC |
N-Channel MOSFET | |
4 | P1060ATF |
UNIKC |
N-Channel MOSFET | |
5 | P1060ATFS |
UNIKC |
N-Channel MOSFET | |
6 | P1065AT |
UNIKC |
N-Channel MOSFET | |
7 | P1065ATF |
UNIKC |
N-Channel MOSFET | |
8 | P1065ETF |
NIKO-SEM |
N-Channel MOSFET | |
9 | P1065ETFS |
NIKO-SEM |
N-Channel MOSFET | |
10 | P106AAT |
UNIKC |
N-Channel MOSFET | |
11 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS | |
12 | P1000A |
Diotec Semiconductor |
Silicon Rectifiers |