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Features
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= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V
REV 1.0 1
MIN
LIMITS TYP MAX
UNIT
600 V
2 2.9 4
±100 nA
F-49-1
NIKO-SEM
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Gate Voltage Drain Current
VDS = 600V, VGS = 0V , TC = 25 °C IDSS
VDS = 480V, VGS = 0V , TC = 100 °C
1 A
10
Drain-Source On-State Resistance1 Forward Transconductance1
RDS(ON)...
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P1060ETF Data Sheet
