OP509B - TT

OP509B NPN Silicon Phototransistor

The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point. Each device in the OP509 series consists of an NPN silicon phototransistor mounted in a lensed, clear plastic “end-looking.

Features

• Flat lensed for wide acceptance angle (OP508F)
• Lensed for high sensitivity (OP509)
• Easily stackable on 0.100” (2.54 mm) hole centers
• Inexpensive plastic package
• Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes OP508 OP509 Description: The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point. Each device in the OP509 series consists of an NPN silicon phototransisto.