The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point. Each device in the OP509 series consists of an NPN silicon phototransistor mounted in a lensed, clear plastic “end-looking.
• Flat lensed for wide acceptance angle (OP508F)
• Lensed for high sensitivity (OP509)
• Easily stackable on 0.100” (2.54 mm) hole centers
• Inexpensive plastic package
• Mechanically and spectrally matched to OP168 and OP268 series of infrared
emitting diodes
OP508
OP509
Description: The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point.
Each device in the OP509 series consists of an NPN silicon phototransisto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | OP509B |
TT |
NPN Silicon Phototransistor | |
2 | OP50 |
Analog Devices |
High Output Current Operational Amplifier | |
3 | OP505 |
TT |
NPN Phototransistors | |
4 | OP505A |
TT |
NPN Phototransistors | |
5 | OP505B |
TT |
NPN Phototransistors | |
6 | OP505C |
TT |
NPN Phototransistors | |
7 | OP505D |
TT |
NPN Phototransistors | |
8 | OP505W |
TT |
NPN Phototransistors | |
9 | OP506 |
TT |
NPN Phototransistors | |
10 | OP506A |
TT |
NPN Phototransistors | |
11 | OP506B |
TT |
NPN Phototransistors | |
12 | OP506C |
TT |
NPN Phototransistors |