Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298AA, which has an 875 nm center wavelength. For identification purposes, each LED anode lead i.
• Choice of narrow or wide irradiance pattern
• Choice of power ranges
• Choice of T-1¾, TO-18 or TO-46 package
• Higher power output than GaAs at equivalent LEDs
Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298AA, which has an 875 nm center wavelength. For identification purposes, each LED anode lead is longer than the cathode lead. Package T-1¾ devices include: OP.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | OP295 |
Analog Devices |
DUAL/QUAD RAIL-TO-RAIL OPERATIONAL AMPLIFIERS | |
2 | OP290 |
TT |
Plastic Infrared Emitting Diode | |
3 | OP290 |
Analog Devices |
Precision / Low Power / Micropower Dual Operational Amplifier | |
4 | OP291 |
Analog Devices |
Micropower Single-Supply Rail-to-Rail Input/Output Op Amps | |
5 | OP292 |
TT |
Plastic Infrared Emitting Diode | |
6 | OP292 |
Analog Devices |
DUAL/QUAD SINGLE SUPPLY OPERATIONAL AMPLIFIER | |
7 | OP293 |
Analog Devices |
Precision / Micropower Operational Amplifiers | |
8 | OP293 |
OPTEK Technologies |
(OP293 / OP298) GaAlAs Plastic Infrared Emitting Diodes | |
9 | OP293C |
TT |
Plastic Infrared Emitting Diode | |
10 | OP294 |
ETC |
GaAlAs Plastic Infrared Emitting Diode | |
11 | OP296 |
Analog Devices |
Micropower / Rail-to-Rail Input and Output Operational Amplifiers | |
12 | OP296C |
TT |
Plastic Infrared Emitting Diode |