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NVMFWS1D9N08X - ON Semiconductor

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NVMFWS1D9N08X N-Channel Power MOSFET

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 mW, 201 A NVMFWS1D9N08X Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant .

Features


• Low QRR, Soft Recovery Body Diode
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applications
• Synchronous Rectification (SR) in DC−DC and AC−DC
• Primary Switch in Isolated DC−DC Converter
• Motor Drives
• Automotive 48 V System MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TC = 25°C ID T.

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