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MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 mW, 273 A NVMFWS0D9N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Mot.
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5x6 mm) with Compact Design
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
DC
VGS
±20
V
Continuous Drain Current
TC = 25°C
ID
273
A
TC = 100°C
193
Power Dissipation
TC = 25°C
PD
121
W
Contin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVMFWS0D7N04XM |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | NVMFWS002N10MCL |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | NVMFWS003N10MC |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | NVMFWS004N10MC |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | NVMFWS1D9N08X |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NVMFWS3D5N08X |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NVMFD020N06C |
ON Semiconductor |
Dual N-Channel Power MOSFET |
|
| 8 | NVMFD024N06C |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | NVMFD027N10MCL |
ON Semiconductor |
Dual N-Channel Power MOSFET |
|
| 10 | NVMFD5483NL |
ON Semiconductor |
Dual N-Channel Power MOSFET |
|
| 11 | NVMFD5485NL |
ON Semiconductor |
Dual N-Channel Power MOSFET |
|
| 12 | NVMFD5489NL |
ON Semiconductor |
Dual N-Channel Power MOSFET |
|