MOSFET - Power, DUAL COOL) N-Channel, DFN8 5x6 40 V, 0.85 mW, 316 A NVMFSC0D9N04CL Features • Advanced Dual−sided Cooled Packaging • Small Footprint (5x6 mm) for Compact Design • Ulra Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Comp.
• Advanced Dual−sided Cooled Packaging
• Small Footprint (5x6 mm) for Compact Design
• Ulra Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
• MSL1 Robust Packaging Design
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Steady TC = 25°C
ID
Current RqJC (Note 2) State TC = 100°C
ID
316
A
224
A
Power Dissipation RqJC (Note 2)
Stea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NVMFS014P04M8L |
ON Semiconductor |
P-Channel MOSFET | |
2 | NVMFS021N10MCL |
ON Semiconductor |
N-Channel Power MOSFET | |
3 | NVMFS027N10MCL |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | NVMFS040N10MCL |
ON Semiconductor |
N-Channel Power MOSFET | |
5 | NVMFS3D0P04M8L |
ON Semiconductor |
P-Channel Power MOSFET | |
6 | NVMFS3D6N10MCL |
ON Semiconductor |
N-Channel Power MOSFET | |
7 | NVMFS4841N |
ON Semiconductor |
Power MOSFET | |
8 | NVMFS4C01N |
ON Semiconductor |
Power MOSFET | |
9 | NVMFS4C03N |
ON Semiconductor |
N-Channel Power MOSFET | |
10 | NVMFS4C05N |
ON Semiconductor |
N-Channel Power MOSFET | |
11 | NVMFS4C305N |
ON Semiconductor |
N-Channel Power MOSFET | |
12 | NVMFS4C306N |
ON Semiconductor |
N-Channel MOSFET |