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MOSFET - Power, Single N-Channel 100 V, 3.6 mW, 132 A NVMFS3D6N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS3D6N10MCL − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free,.
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFWS3D6N10MCL − Wettable Flank Option for Enhanced
Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State TC = 100°C
132
A
84
Power Dissipation .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVMFS3D0P04M8L |
ON Semiconductor |
P-Channel Power MOSFET |
|
| 2 | NVMFS014P04M8L |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | NVMFS021N10MCL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NVMFS027N10MCL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NVMFS040N10MCL |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NVMFS4841N |
ON Semiconductor |
Power MOSFET |
|
| 7 | NVMFS4C01N |
ON Semiconductor |
Power MOSFET |
|
| 8 | NVMFS4C03N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 9 | NVMFS4C05N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 10 | NVMFS4C305N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 11 | NVMFS4C306N |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | NVMFS4C308N |
ON Semiconductor |
N-Channel MOSFET |
|