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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L NVBG1000N170M1 Features • Typ. RDS(on) = 960 mW @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and Ro.
• Typ. RDS(on) = 960 mW @ VGS = 20 V
• Ultra Low Gate Charge (QG(tot) = 14 nC)
• High Speed Switching with Low Capacitance (Coss = 11 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Flyback Converter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Recommended Operation Values of Gate−to−Source Voltage
TC < 175°C
VDSS
1700
V
VGS −15/+25 V
VGSop −5/+20 V
C.
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