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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L NVBG040N120M3S Features • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a.
• Typ. RDS(on) = 40 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 75 nC)
• High Speed Switching with Low Capacitance (Coss = 80 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection) Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
1200
V
Gate−to−Source Voltage
VGS −10/+22 V
Recommended Operation Values TC < 1.
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|---|---|---|---|---|
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