NTMYS2D2N06CL - ON Semiconductor

NTMYS2D2N06CL N-Channel Power MOSFET

MOSFET – Power, Single, N-Channel 60 V, 2.0 mW, 185 A NTMYS2D2N06CL Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  LFPAK4 Package, Industry Standard  These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) P.

Features

 Small Footprint (5x6 mm) for Compact Design
 Low RDS(on) to Minimize Conduction Losses
 Low QG and Capacitance to Minimize Driver Losses
 LFPAK4 Package, Industry Standard
 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS 20 V Continuous Drain Current RqJC (Notes 1, 2, 3) Steady TC = 25C ID State TC = 100C 185 A 131 Power Dissipation RqJC (Notes 1, 2) TC = 25C PD TC = 100C 134 W 67 Continuous Drain Current RqJA (Notes 1,.