NTMYS020N08LH - ON Semiconductor

NTMYS020N08LH N-Channel Power MOSFET

MOSFET - Power, Single N-Channel 80 V, 19.5 mW, 30 A NTMYS020N08LH Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) P.

Features

• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• LFPAK4 Package, Industry Standard
• These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 30 A 21 Power Dissipation RqJC (Note 1) TC = 25°C PD TC = 100°C 42 W 21 Continuous Drain Current RqJA (Notes 1, 2, 3) .