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Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L NTHL1000N170M1 Features • Typ. RDS(on) = 960 mW • Ultra Low Gate Charge (typ. QG(tot) = 14 nC) • Low Effective Output Capacitance (typ. Coss = 11 pF) • 100% Avalanche Tested • RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Electric Storing.
• Typ. RDS(on) = 960 mW
• Ultra Low Gate Charge (typ. QG(tot) = 14 nC)
• Low Effective Output Capacitance (typ. Coss = 11 pF)
• 100% Avalanche Tested
• RoHS Compliant
Typical Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• Electric Storing Systems
• SMPS (Switch Mode Power Supplies)
• UPS (Uninterruptible Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
1700
V
Gate−to−Source Voltage
VGS −15/+25 V
Recommended Operation Values TC < 175°C VGSop −5/+20 V of Gate−to−Source Voltage
Continuous.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTHL110N65S3F |
ON Semiconductor |
Power MOSFET |
|
| 2 | NTHL190N65S3HF |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NTHL020N090SC1 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | NTHL020N120SC1 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | NTHL033N65S3HF |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | NTHL040N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 7 | NTHL040N65S3F |
ON Semiconductor |
Power MOSFET |
|
| 8 | NTHL040N65S3F |
INCHANGE |
N-Channel MOSFET |
|
| 9 | NTHL060N090SC1 |
ON Semiconductor |
N-Channel MOSFET |
|
| 10 | NTHL065N65S3F |
ON Semiconductor |
Power MOSFET |
|
| 11 | NTHL080N120SC1 |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | NTHL082N65S3F |
ON Semiconductor |
Power MOSFET |
|