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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L NTHL040N120M3S Features • Typ. RDS(on) = 40 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inte.
• Typ. RDS(on) = 40 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 75 nC)
• High Speed Switching with Low Capacitance (Coss = 80 pF)
• 100% Avalanche Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection) Typical Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• UPS (Uninterruptible Power Supplies)
• Energy Storage Systems
• SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTHL040N65S3F |
ON Semiconductor |
Power MOSFET |
|
| 2 | NTHL040N65S3F |
INCHANGE |
N-Channel MOSFET |
|
| 3 | NTHL020N090SC1 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | NTHL020N120SC1 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | NTHL033N65S3HF |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | NTHL060N090SC1 |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | NTHL065N65S3F |
ON Semiconductor |
Power MOSFET |
|
| 8 | NTHL080N120SC1 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | NTHL082N65S3F |
ON Semiconductor |
Power MOSFET |
|
| 10 | NTHL082N65S3HF |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | NTHL099N60S5 |
ON Semiconductor |
N-Channel MOSFET |
|
| 12 | NTHL1000N170M1 |
ON Semiconductor |
SiC MOSFET |
|