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NTE637 Schottky Barrier Diode (Surface Mount) Absolute Maximum Ratings: (Ta = +25°C, Note 1, unless otherwise specified) Repetitive Peak Reverse Voltage, VRRM . . 30V Average Rectified Forward Current, IF(AV) . . . ..
. . . . . . 430°C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics: (Tc = +25°C, unless otherwise specified) Parameter Breakdown Voltage g Forward Voltage Symbol VR VF Test Conditions IR = 10µA IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V VR = 1V, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω .016 (0.48) Min 30 − − − − − − − − Typ − − − − − − − − − Max − 240 320 400 500 0.8 2 10 5.0 Unit V mV mV mV mV V µA pF ns www.DataSheet4U.com Reverse Leakage Total Capacitance Reverse.
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|---|---|---|---|---|
| 1 | NTE63 |
NTE Electronics |
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| 2 | NTE630 |
NTE Electronics |
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| 3 | NTE6354 |
NTE Electronics |
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| 4 | NTE6365 |
NTE Electronics |
Silicon Power Rectifier Diode / 300 Amp |
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| 5 | NTE60 |
NTE Electronics |
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| 6 | NTE600 |
NTE |
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| 7 | NTE6005 |
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| 8 | NTE6006 |
NTE Electronics |
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| 9 | NTE6007 |
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| 10 | NTE6008 |
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(NTE6006 - NTE6011) Fast Recovery Rectifier / 40A / 200ns |
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| 11 | NTE6009 |
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(NTE6006 - NTE6011) Fast Recovery Rectifier / 40A / 200ns |
|
| 12 | NTE601 |
NTE Electronics |
Silicon Varistor Temperature Compensating Diode |
|