NTE637 |
Part Number | NTE637 |
Manufacturer | NTE |
Description | NTE637 Schottky Barrier Diode (Surface Mount) Absolute Maximum Ratings: (Ta = +25°C, Note 1, unless otherwise specified) Repetitive Peak Reverse Voltage, VRRM. . . . . . . . . .... |
Features |
. . . . . . 430°C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics: (Tc = +25°C, unless otherwise specified)
Parameter Breakdown Voltage g Forward Voltage Symbol VR VF Test Conditions IR = 10µA IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V VR = 1V, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω
.016 (0.48)
Min 30 − − − − − − − −
Typ − − − − − − − − −
Max − 240 320 400 500 0.8 2 10 5.0
Unit V mV mV mV mV V µA pF ns
www.DataSheet4U.com
Reverse Leakage Total Capacitance Reverse... |
Document |
NTE637 Data Sheet
PDF 100.71KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTE63 |
NTE Electronics |
Silicon NPN Transistor High Gain / Low Noise Amp | |
2 | NTE630 |
NTE Electronics |
Silicon Rectifier Fast Recovery / Dual / Center Tap | |
3 | NTE6354 |
NTE Electronics |
Silicon Power Rectifier Diode / 300 Amp | |
4 | NTE6365 |
NTE Electronics |
Silicon Power Rectifier Diode / 300 Amp | |
5 | NTE60 |
NTE Electronics |
Silicon Complementary Transistors High Power Audio / Disk Head Positioner for Linear Applications |