Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
NTE5417 thru NTE5419 Silicon Controlled Rectifier (SCR) 10 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5417 . . . . 200V NTE5418 . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On
–State Current (TC = +80°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . 10A Peak Surge (Non
–Repetitive) On
–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . 100A Peak Gate
–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate
–Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W Average Gate Power Dissipation, PG(AV) . . . . . . . .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTE5410 |
NTE |
Silicon Controlled Rectifier |
|
| 2 | NTE5411 |
NTE |
Silicon Controlled Rectifier |
|
| 3 | NTE5416 |
NTE |
Silicon Controlled Rectifier |
|
| 4 | NTE5417 |
NTE |
Silicon Controlled Rectifier |
|
| 5 | NTE54 |
NTE |
Silicon Complementary Transistors |
|
| 6 | NTE5400 |
NTE |
Silicon Controlled Rectifier |
|
| 7 | NTE5401 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate |
|
| 8 | NTE5402 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate |
|
| 9 | NTE5403 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate |
|
| 10 | NTE5404 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate |
|
| 11 | NTE5405 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate |
|
| 12 | NTE5406 |
NTE |
Silicon Controlled Rectifier |
|