The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and remote control, and warning systems where reliability of operation is important. Features: D Passivated Surface for Reliability and Uniformity D Power Rated at Economical Pr.
D Passivated Surface for Reliability and Uniformity D Power Rated at Economical Prices D Practical Level Triggering and Holding Characteristics Absolute Maximum Ratings: (TC = +110°C unles otherwise specified) Repetitive Peak Forward and Reverse Blocking Voltage, VDRM, VRRM (1/2 Sine Wave, RGK = 1000Ω, TC =
–40° to +110°C, Note 1) NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTE5410 |
NTE |
Silicon Controlled Rectifier | |
2 | NTE5416 |
NTE |
Silicon Controlled Rectifier | |
3 | NTE5417 |
NTE |
Silicon Controlled Rectifier | |
4 | NTE5419 |
NTE |
Silicon Controlled Rectifier | |
5 | NTE54 |
NTE |
Silicon Complementary Transistors | |
6 | NTE5400 |
NTE |
Silicon Controlled Rectifier | |
7 | NTE5401 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
8 | NTE5402 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
9 | NTE5403 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
10 | NTE5404 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
11 | NTE5405 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
12 | NTE5406 |
NTE |
Silicon Controlled Rectifier |