The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200µA. These NTE SCRs are reverse–blocking triode thyri.
. . . . . . . . . . . . . . . . . . . . . . . 400V NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Off
–State Voltage (TC = +100°C), VDRXM NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5410 . . . . . . . . . . . . . . . . . . . . . . ..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTE5400 |
NTE |
Silicon Controlled Rectifier | |
2 | NTE5401 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
3 | NTE5402 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
4 | NTE5403 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
5 | NTE5404 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
6 | NTE5405 |
NTE |
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate | |
7 | NTE5406 |
NTE |
Silicon Controlled Rectifier | |
8 | NTE54 |
NTE |
Silicon Complementary Transistors | |
9 | NTE5410 |
NTE |
Silicon Controlled Rectifier | |
10 | NTE5411 |
NTE |
Silicon Controlled Rectifier | |
11 | NTE5416 |
NTE |
Silicon Controlled Rectifier | |
12 | NTE5417 |
NTE |
Silicon Controlled Rectifier |