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NTD4979N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Three Package Variations for Design Flexibility • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Pow.
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Three Package Variations for Design Flexibility
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
TA = 25°C TA = 100°C
VDSS VGS ID
30 ±20 12.7
9.0
V V A
Power Dissipation RqJA (Note 1)
Continuous Drain Cur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTD4970N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 2 | NTD4904N |
ON Semiconductor |
Power MOSFET |
|
| 3 | NTD4905N |
ON Semiconductor |
Power MOSFET |
|
| 4 | NTD4906N |
ON Semiconductor |
Power MOSFET |
|
| 5 | NTD4909N |
ON Semiconductor |
Power MOSFET |
|
| 6 | NTD4910N |
ON Semiconductor |
Power MOSFET |
|
| 7 | NTD4913N |
ON Semiconductor |
Power MOSFET |
|
| 8 | NTD4960N |
ON Semiconductor |
Power MOSFET |
|
| 9 | NTD4963N |
ON Semiconductor |
Power MOSFET |
|
| 10 | NTD4965N |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 11 | NTD4969N |
ON Semiconductor |
Power MOSFET |
|
| 12 | NTD40 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
|