NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Pow.
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DC−DC Converters
Recommended for High Side (Control)
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
30
V
VGS
20
V
TA = 25C
ID
11.1
A
TA = 85C
8.0
Power D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NTD4963N |
ON Semiconductor |
Power MOSFET | |
2 | NTD4965N |
ON Semiconductor |
N-Channel Power MOSFET | |
3 | NTD4969N |
ON Semiconductor |
Power MOSFET | |
4 | NTD4904N |
ON Semiconductor |
Power MOSFET | |
5 | NTD4905N |
ON Semiconductor |
Power MOSFET | |
6 | NTD4906N |
ON Semiconductor |
Power MOSFET | |
7 | NTD4909N |
ON Semiconductor |
Power MOSFET | |
8 | NTD4910N |
ON Semiconductor |
Power MOSFET | |
9 | NTD4913N |
ON Semiconductor |
Power MOSFET | |
10 | NTD4970N |
ON Semiconductor |
N-Channel Power MOSFET | |
11 | NTD4979N |
ON Semiconductor |
Power MOSFET | |
12 | NTD40 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |