NTCR040N120M3S - ON Semiconductor

NTCR040N120M3S SiC MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, r.

Features

• Typ. RDS(on) = 40 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 75 nC)
• High Speed Switching with Low Capacitance (Coss = 80 pF) Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• Uninterruptible Power Supplies (UPS)
• Energy Storage Systems
• Switch Mode Power Supplies (SMPS) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −10/+22 V Recommended Operation Values TC<175°C VGSop −5/+18 V of Gate−to−Source Voltage Operating Junction and Storage Temperature TJ, Tstg .