NTCR013N120M3S - ON Semiconductor

NTCR013N120M3S SiC MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, r.

Features

• Typ. RDS(on) = 13 mW @ VGS = 18 V
• Low Switching Losses (Typ. EON 563 J at 75 A, 800 V) Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• Uninterruptible Power Supplies (UPS)
• Energy Storage Systems
• Switch Mode Power Supplies (SMPS) DIE DATA SHEET www.onsemi.com V(BR)DSS 1200 V RDS(on) TYP 13 mW @ 18 V ID MAX 151 A N−CHANNEL MOSFET D G S DIE DIAGRAM G S1 S2 S3 Die Information S Wafer Diameter S Die Size S Metallization ⋅ Top ⋅ Back S Die Thickness S Gate Pad Size 6 inch 4,380 x 6,380 mm Al/Si/Cu Ti/NiV/Ag Typ. 100 mm 5 mm 0.5 mm 1300 x 1068 mm © Semicon.