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MOSFET - Power, Single N-Channel, TOLL 100 V, 1.5 mW, 312 A NTBLS1D5N10MC Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Vo.
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• Lowers Switching Noise/EMI
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
312
A
220
322 W
161
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
ID
.
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|---|---|---|---|---|
| 1 | NTBLS1D1N08H |
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| 2 | NTBLS1D7N08H |
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| 3 | NTBLS1D7N10MC |
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| 4 | NTBLS0D7N06C |
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