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Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TOLL NTBL045N065SC1 Features • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power S.
• Typ. RDS(on) = 33 mW @ VGS = 18 V
Typ. RDS(on) = 45 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 105 nC)
• Low Effective Output Capacitance (Coss = 162 pF)
• 100% Avalanche Tested
• TJ = 175°C
• RoHS Compliant
Typical Applications
• SMPS (Switching Mode Power Supplies)
• Solar Inverters
• UPS (Uninterruptable Power Supplies)
• Energy Storage
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Recommended Operation Values of Gate − Source Voltage
TC < 175°C
VDSS
650
V
VGS −8/+22.6 V
VGSop −5/+18 V
Conti.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NTBL050N65S3H |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | NTBL070N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | NTBL075N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 4 | NTBL095N65S3H |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | NTBLS0D7N06C |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NTBLS0D8N08X |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NTBLS1D1N08H |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | NTBLS1D5N10MC |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | NTBLS1D7N08H |
ON Semiconductor |
N-Channel MOSFET |
|
| 10 | NTBLS1D7N10MC |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | NTB0101 |
NXP |
Dual supply translating transceiver |
|
| 12 | NTB0101A |
NXP |
Auto direction sensing dual supply |
|