NT5DS16M16ES - Nanya

NT5DS16M16ES Commercial and Industrial Consumer DDR 256Mb SDRAM

Nanya 256Mb SDRAMs is a high-speed CMOS Double Data Rate SDRAM containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. It uses a double-data-rate architecture to achieve high speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle.

Features

 JEDEC DDR Compliant - Differential clock inputs (CK and ) - DLL aligns DQ and DQS transition with CK transitions - 2n Prefetch Architecture - DQS is edge-aligned with data for reads and center-aligned with data for WRITEs - DQ and DM referenced to both edges of DQS - tRAS lockout (tRAP = tRCD)
 Signal Integrity - Configurable DS for system compatibility
 Data Integrity - Auto Refresh Mode - Self Refresh Mode
 Power Saving Mode - Power Down Mode
 Interface and Power Supply - SSTL_2 compatible (All inputs) - SSTL_2, Class II compatible (All outputs) - VDD/VDDQ=2.5V±0.2V (DDR-333) - VDD.