NT5DS16M16BW - Nanya Techology

NT5DS16M16BW (NT5DSxxMxBx) 256Mb DDR SDRAM

The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4, or 8 locations. An Auto Precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the bu.

Features

CAS Latency and Frequency Maximum Operating Frequency (MHz)
* DDR333 DDR266B (-6K)
* (-75B) 2 133 100 2.5 166 133
* -6K also meets DDR266A Spec (MHz-CL-tRCD-tRP = 133-2-3-3) CAS Latency
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• Double data rate architecture: two data transfers per clock cycle
• Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
• DQS is edge-aligned with data for reads and is centeraligned with data for writes Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for write data.