The NTC 16Meg SDRAM is a high-speed CMOS dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (512K x 16) with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the two internal banks is organized with 2,048 rows and with either 256 columns by 16 .
T 16Mb: 1Mx16 Synchronous DRAM DESCRIPTION The NTC 16Meg SDRAM is a high-speed CMOS dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (512K x 16) with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the two internal banks is organized with 2,048 rows and with either 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NT56V1640A0T |
Nanya Technology |
(NT56V1640A0T / NT56V1680A0T) 16M SDRAM | |
2 | NT56V1680A0T |
Nanya Technology |
(NT56V1640A0T / NT56V1680A0T) 16M SDRAM | |
3 | NT50198 |
Novatek |
TFT-LCD 3-Channel Charge Pump Power IC | |
4 | NT511740C5J |
Nanya Technology |
Fast Page Mode with EDO DRAM | |
5 | NT511740D0J |
Nanya Technology |
Fast Page Mode DRAM | |
6 | NT511740D5J |
Nanya Technology |
CMOS with Rxtended Data Out | |
7 | NT512D64S8HB0G |
ETC |
184 pin Unbuffered DDR DIMM | |
8 | NT512D64S8HB1G |
ETC |
184 pin Unbuffered DDR DIMM | |
9 | NT512D64S8HB1GY |
ETC |
184 pin Unbuffered DDR DIMM | |
10 | NT512D72S8PB0G |
ETC |
184 pin Unbuffered DDR DIMM | |
11 | NT52001 |
Novatek |
960/864/816/800 Outputs TFT-LCD Gate Driver | |
12 | NT5CB1024M4BN |
Nanya |
4Gb DDR3 SDRAM B-Die |